(China (Mainland))
Product Summary
The FM25CL64B-GTR is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM25CL64B-GTR provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Parametrics
FM25CL64B-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)Voltage on any pin with respect to VSS: -1.0V to +5.0V and VIN < VDD+1.0V; (3)Storage Temperature: -55℃ to + 125℃; (4)Lead Temperature (Soldering, 10 seconds): 300℃.
Features
FM25CL64B-GTR features: (1)64K bit Ferroelectric Nonvolatile RAM: Organized as 8,192 x 8 bits, Unlimited Read/Write Cycles, 10 Year Data Retention, NoDelay Writes, Advanced High-Reliability Ferroelectric Process; (2)Very Fast Serial Peripheral Interface - SPI: Up to 20 MHz Frequency, Direct Hardware Replacement for EEPROM, SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (3)Sophisticated Write Protection Scheme: Hardware Protection, Software Protection.
Diagrams
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