Product Summary
The TPS2021IDRQ1 is a power distribution switch intended for applications where heavy capacitive loads and short circuits are likely to be encountered. The TPS2021IDRQ1 is 50-mW N-channel MOSFET high-side power switch. The switch is controlled by a logic enable compatible with 5-V logic and 3-V logic. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 2.7 V.
Parametrics
TPS2021IDRQ1 absolute maximum ratings: (1)Input voltage range, VI(IN): -0.3 V to 6 V; (2)Output voltage range, VO(OUT): -0.3 V to VI(IN) + 0.3 V; (3)Input voltage range, VI(EN): -0.3 V to 6 V; (4)Continuous output current, IO(OUT): internally limited; (5)Continuous total power dissipation: See Dissipation Rating Table; (6)Operating virtual junction temperature range, TJ: -40℃ to 125℃; (7)Storage temperature range, Tstg: -65℃ to 150℃; (8)Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds: 260℃; (9)Electrostatic discharge (ESD) protection: Human body model: 2 kV; Machine model: 200V; Charged device model (CDM): 750 V.
Features
TPS2021IDRQ1 features: (1)33-mW (5-V Input) High-Side MOSFET Switch; (2)Short-Circuit and Thermal Protection; (3)Overcurrent Logic Output; (4)Operating Range: 2.7 V to 5.5 V; (5)Logic-Level Enable Input; (6)Typical Rise Time: 6.1 ms; (7)Undervoltage Lockout; (8)Maximum Standby Supply Current: 10 mA; (9)No Drain-Source Back-Gate Diode; (10)Available in 8-pin SOIC and PDIP Packages; (11)Ambient Temperature Range, -40℃ to 85℃; (12)2-kV Human-Body-Model, 200-V Machine-Model ESD Protection.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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TPS2021IDRQ1 |
Texas Instruments |
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