(China (Mainland))
Product Summary
The FM24C16B-GTR is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM24C16B-GTR provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
Parametrics
FM24C16B-GTR absolute maximum ratings: (1)Power Supply Voltage with respect to VSS: -1.0V to +7.0V; (2)VIN Voltage on any signal pin with respect to VSS: -1.0V to +7.0V and VIN < VDD+1.0V; (3)TSTG Storage Temperature: -55℃ to +125℃; (4)TLEAD Lead Temperature (Soldering, 10 seconds): 260℃; (5)VESD Electrostatic Discharge Voltage: Human Body Model (AEC-Q100-002 Rev. E): TBD, Charged Device Model (AEC-Q100-011 Rev. B): TBD, Machine Model (AEC-Q100-003 Rev. E): TBD.
Features
FM24C16B-GTR features: (1)16K bit Ferroelectric Nonvolatile RAM: Organized as 2,048 x 8 bits, High Endurance (1012) Read/Write Cycles, 38 year Data Retention, NoDelay Writes, Advanced High-Reliability Ferroelectric Process; (2)Fast Two-wire Serial Interface: Up to 1MHz maximum bus frequency, Direct hardware replacement for EEPROM, Supports legacy timing for 100 kHz & 400 kHz; (3)Low Power Operation: 5V operation, 100 μA Active Current (100 kHz), 4 μA (typ.) Standby Current; (4)Industry Standard Configuration: Industrial Temperature -40℃ to +85℃, 8-pin "Green"/RoHS SOIC (-G).
Diagrams
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Fairchild Semiconductor |
EEPROM TSSOP-8 |
Data Sheet |
Negotiable |
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FM24C02UFLMT8X |
Fairchild Semiconductor |
EEPROM TSSOP-8 |
Data Sheet |
Negotiable |
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FM24C02ULM8 |
Fairchild Semiconductor |
EEPROM |
Data Sheet |
Negotiable |
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FM24C02UEM8X |
Fairchild Semiconductor |
EEPROM SOIC-8 |
Data Sheet |
Negotiable |
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FM24C02UFLEMT8X |
Fairchild Semiconductor |
EEPROM TSSOP-8 |
Data Sheet |
Negotiable |
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FM24C02ULMT8 |
Fairchild Semiconductor |
EEPROM TSSOP-8 |
Data Sheet |
Negotiable |
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