Product Summary
The DG636EQ-T1-E3 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636EQ-T1-E3 is fully specified at + 3 V, + 5 V and ± 5 V. All control logic inputs have guaranteed 2 V logic high limits when operating from + 5 V or ± 5 V supplies and 1.4 V when operating from a 3 V supply. The applications of the device DG636EQ-T1-E3 (1)High-end data acquisition; (2)Medical instruments; (3)Precision instruments; (4)High speed communications applications; (5)Automated test equipment; (6)Sample and hold applications.
Parametrics
DG636EQ-T1-E3 absolute maximum ratings: (1)V+ to V- : 14V; (2)V GND to V-: 7V; (3)Digital Inputsa, VS, VD: (V-) - 0.3 to (V+) + 0.3 or 30 mA, whichever occurs first; (4)Continuous Current (Any Terminal): 30mA; (5)Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle): 100mA; (6)Storage Temperature: - 65 to 150℃; (7)Power Dissipation: 450mW.
Features
DG636EQ-T1-E3 features: (1)Ultra low charge injection (± 0.5 pC, typ. over the full analog signal range); (2)Leakage current < 0.5 nA max. at 85℃; (3)Low switch capacitance (Csoff, 2 pF typ.); (4)Low rDS(on) - 115 Ω max.; (5)Fully specified with single supply operation at 3.0 V, 5.0 V and dual supplies at ± 5.0 V; (6)Low voltage, 2.5 V CMOS/TTL compatible; (7)600 MHz, - 3 dB bandwidth; (8)Excellent isolation and crosstalk performance (typ. > - 60 dB at 10 MHz); (9)Fully specified from - 40 to 85℃ and - 40 to + 125℃; (10)14 Pin TSSOP and 16 Pin miniQFN package (1.8 × 2.6 mm).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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DG636EQ-T1-E3 |
Vishay/Siliconix |
Analog Switch ICs Dual SPDT Switches |
Data Sheet |
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DG636 |
Other |
Data Sheet |
Negotiable |
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DG636EN-T1-E4 |
Vishay |
Analog Switch ICs Dual SPDT Switches |
Data Sheet |
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DG636EQ-T1-E3 |
Vishay/Siliconix |
Analog Switch ICs Dual SPDT Switches |
Data Sheet |
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