MAT14ARZ-R7

NPN dual monolithic transistor, MAT14ARZ-R7, DIP, 40 V, 20 mA

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Price:: US $5.70~13.80 / piece [Get Latest Price]

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	US $5.70~13.80

PartNumber:: MAT14ARZ-R7

Brand:: Analog Devices - ADI | Pack: SOP | D/C: 11+

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Products Upload time: 2012-10-09

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Part Number:MAT14ARZ-R7
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Product Summary

The MAT14ARZ-R7 is an NPN dual monolithic transistor. It is optimized for very low noise, low drift, and low rBE. Precision Monolithics’ exclusive Silicon Nitride Triple-Passivation process stabilizes the critical device parameters over wide ranges of temperature and elapsed time. Also, the high current gain (hFE) of the MAT14ARZ-R7 is maintained over a wide range of collector current. Exceptional characteristics of the MAT14ARZ-R7 include offset voltage of 50 µV max (A/E grades) and 150 uV max F grade.

Parametrics

MAT14ARZ-R7 absolute maximum ratings: (1)Collector-Base Voltage (BVCBO): 40 V; (2)Collector-Emitter Voltage (BVCEO): 40 V; (3)Collector-Collector Voltage (BVCC): 40 V; (4)Emitter-Emitter Voltage (BVEE): 40 V; (5)Collector Current (IC): 20 mA; (6)Emitter Current (IE): 20 mA; (7)Total Power Dissipation: 1.8 W; (8)Operating Temperature Range: –55℃ to +125℃; (9)Operating Junction Temperature: –55℃ to +150℃; (10)Storage Temperature: –65℃ to +150℃; (11)Lead Temperature (Soldering, 60 sec): +300℃; (12)Junction Temperature: –65℃ to +150℃.

Features

MAT14ARZ-R7 features: (1)Low Offset Voltage: 50 mV max; (2)Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max; (3)High Gain (hFE): 500 min at IC = 1 mA, 300 min at IC = 1 mA; (4)Excellent Log Conformance: rBE . 0.3 V; (5)Low Offset Voltage Drift: 0.1 uV/8℃ max; (6)Improved Direct Replacement for LM194/394; (7)Available in Die Form.