(China (Mainland))
Product Summary
The FM25V02-G is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. The FM25V02-G provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.
Parametrics
FM25V02-G absolute maximum ratings: (1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +4.5V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +4.5V and VIN < VDD+1.0V; (3)TSTG, Storage Temperature: -55 to + 125℃; (4)TLEAD, Lead Temperature (Soldering, 10 seconds): 260℃; (5)VESD ,Electrostatic Discharge Voltage: 1kV; (6)Package Moisture Sensitivity Level: MSL-1.
Features
FM25V02-G features: (1)Organized as 32,768 x 8 bits; (2)High Endurance 100 Trillion (1014) Read/Writes; (3)10 Year Data Retention; (4)NoDelay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 40 MHz Frequency; (7)Direct Hardware Replacement for Serial Flash; (8)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (9)Low Voltage, Low Power.
Diagrams
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 FM25V02-G |
Ramtron |
F-RAM 256K (32Kx8) 3.0V F-RAM |
Data Sheet |
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FM25V02-GTR |
Ramtron |
F-RAM 256K (32Kx8) 3.0V F-RAM |
Data Sheet |
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