(China (Mainland))
Product Summary
The AT-31033-TR1G is a high performance NPN bipolar transistor that has been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033-TR1G places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques.
Parametrics
AT-31033-TR1G absolute maximum ratings: (1)VEBO Emitter-Base Voltage V 1.5; (2)VCBO Collector-Base Voltage V 11; (3)VCEO Collector-Emitter Voltage V 5.5; (4)IC Collector Current mA 16; (5)PT Power Dissipation mW 150; (6)Tj Junction Temperature 150℃; (7)TSTG Storage Temperature -65 to 150℃.
Features
AT-31033-TR1G features: (1)High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation; (2)900 MHz Performance; (3)Characterized for End-Of-Life Battery Use (2.7 V); (4)SOT-143 SMT Plastic Package; (5)Tape-And-Reel Packaging Option Available.
Diagrams
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 AT-31033-TR1G |
Avago Technologies |
Transistors Bipolar (BJT) Transistor Si Low Current |
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